| LC control no. | sh 00005424 |
|---|---|
| Topical heading | Metal organic chemical vapor deposition |
| Variant(s) | Metal organic vapor phase epitaxy Metallorganic vapor phase epitaxy MOCVD (Vapor deposition) MOVPE (Vapor deposition) OMCVD (Vapor deposition) OMVPE (Vapor deposition) Organo-metal vapor phase epitaxy Organometallic chemical vapor deposition Organometallic vapor phase epitaxy |
| See also | Chemical vapor deposition |
| Found in | Work cat.: Structure of Ge(100) surfaces for high-efficiency photovoltaic applications. McGraw-Hill dict. sci. tech. (metal-organic chemical vapor deposition: a technique for growing thin layers of compound semiconductors in which metal organic compounds having the formula MR where M is a group III metal and R is an organic radical are decomposed near the surface of a heated substrate wafer in the presence of a hydrid of a group V element; abbreviated MOCVD) MOCVD.com home page May 25, 2000 (MOCVD stands for stands for Metal Organic Chemical Vapor Deposition, a materials science technology used for growing compound semiconductor-based epitaxial wafers and devices. MOCVD technology is also known in some circles as OMVPE (Organo-Metal Vapor Phase Epitaxy) and MOVPE (Metal Organic Vapor Phase Epitaxy). Although "OMVPE" is technically the most accurate term, all three essentially mean the same thing and are often used interchangeably.) Engineering index annual 1997, 1998 (hdgs., MOCVD, Metallorganic vapor phase epitaxy) |
 |  |  |