| LC control no. | n 84133986 |
|---|---|
| Personal name heading | Gösele, U. |
| Variant(s) | Gösele, Ulrich Gösele, W. Goesele, Ulrich M. |
| Found in | Author's Carbon, oxygen and their interaction with intrinsic point defects in solar silicon ribbon material, 1983: t.p. (U. Gösele, Dept. of Materials Science and Engineering, Cornell Univ., Ithaca, NY) Symp. on Defects in Silicon (2nd : 1991 : Washington, D.C.). Proceedings ... c1991: t.p. (Ulrich Gösele) Intl. Symp. on Semicond. Wafer Bonding: Sci., Technol. & Appls. (1st : 1991 : Phoenix, Ariz.). Proceedings ... c1992: t.p. (Ulrich Gösele) spine (W. Gösele) Wafer bonding, c2004: CIP t.p. (U. Gösele) t.p. verso (Dr. U. Gösele, Max Planck Inst. Microstructure Physics, Halle (Saale), Ger.) data sheet (b. Jan. 25, 1949) Advances in microelectronic device technology, c2001: t.p. (Ulrich M. Goesele) p. vii (Max-Planck-Institut für Mikrostrukturphysik, Germany) Max Planck Institute of Microstructure Physics Web site, Apr. 29, 2010 (Professor Ulrich Gösele, director of the Max Planck Institute of Microstructure Physics and scientific member of the Max Planck Society; b. 1949, Stuttgart, Germany; d. Nov. 8, 2009) |
| Invalid LCCN | no2010060673 |
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