| LC control no. | n 86810984 |
|---|---|
| Personal name heading | Reif, Rafael |
| Variant(s) | Reif, L. Rafael |
| Found in | nuc86-17757: His Doping process in silicon epitaxy, 1978 (hdg. on CSt rept.: Reif, Rafael; usage: Rafael Reif) International Symposium on Advanced Materials for ULSI (1st : 1988 : Atlanta, Ga.). Proceedings of the First International Symposium on ... c1988: t.p. (Rafael Reif; M.I.T., Cambridge, Mass.) Wafer level 3-D ICs process technology, c2008: pdf t.p. (L. Rafael Reif) Bio. resource center (AMWS), May 26, 2010 (Reif, L. Rafael; b. Aug. 21, 1950, Maracaibo, Venezuela; electronics engineer, school administrator, computer scientist, computer science educator; Stanford Univ, Ph. D. (elec eng), 1979; Provost, Mass Inst Technol, 2007) Massachusetts Institute of Technology, Office of the Provost Web site, May 26, 2010 (L. Rafael Reif) Digital dissertations, May 26, 2010 (Reif, Rafael Leo, Ph. D., Stanford University, 1979--Doping process in silicon epitaxy) Stanford University Web OPAC, May 26, 2010 (Reif, Rafael--Doping process in silicon epitaxy [Thesis (Ph. D.)--Dept. of Electrical Engineering, Stanford University, 1979]) |
| Invalid LCCN | no2010083915 |
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