| LC control no. | n 92036452 |
|---|---|
| Descriptive conventions | rda |
| Personal name heading | Aseev, A. L. (Aleksandr Leonidovich) |
| Variant(s) | Aseev, Aleksandr Leonidovich, 1946- Aseev, Alexander L., 1946- Aseev, Alexandre L., 1946- Асеев, А. Л. (Александр Леонидович), 1946- Асеев, Александр Леонидович, 1946- |
| Located | Novosibirsk (Russia) |
| Birth date | 1946-09-24 |
| Place of birth | Ulan-Udė (Russia) |
| Field of activity | Education, Higher |
| Affiliation | Rossiĭskai︠a︡ akademii︠a︡ nauk. Sibirskoe otdelenie |
| Special note | Non-Latin script references not evaluated. |
| Found in | Skoplenii︠a︡ mezhdouzelʹnykh atomov v ... 1991: t.p. verso (A.L. Aseev) colophon (Aseev Aleksandr Leonidovich) Clusters of interstitial atoms in silicon and germanium, c1994: t.p. (Alexandre L. Aseev) t.p. verso (Prof. Dr.; Institute of Semiconductor Physics, Novosibirsk, Russia) Atomnai︠a︡ struktura poluprovodnikovykh sistem, 2006: t.p. (chlen-korrespondent RAN A.L. Aseev) Aleksandr Leonidovich Aseev, 2012: t.p. (Александр Леонидович Асеев = Aleksandr Leonidovich Aseev) Advances in semiconductor nanostructures, 2016: title page (Alexander L. Aseev, Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia) Wikipedia, viewed Mar. 8, 2017 under Асеев, Александр Леонидович = Aseev, Aleksandr Leonidovich (род. 24 сентября 1946 года в Улан-Удэ = rod. 24 senti︠a︡bri︠a︡ goda v Ulan-Udė = born September 24, 1946 in Ulan-Ude) <https://ru.wikipedia.org/wiki/Асеев,_Александр_Леонидович> |
| Associated language | eng rus |
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